Thermodynamic equilibrium displacement controlled epitaxial growth of GaAs

B. A. Lombos, D. Côté, Jean-Pol Dodelet, M. F. Lawrence and J. Ivan Dickson

Article (1986)

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Department:	Department of Mechanical Engineering
PolyPublie URL:	https://publications.polymtl.ca/69546/
Journal Title:	Journal of Crystal Growth (vol. 79, no. 1-3)
Publisher:	Elsevier BV
DOI:	10.1016/0022-0248(86)90477-x
Official URL:	https://doi.org/10.1016/0022-0248%2886%2990477-x
Date Deposited:	26 Nov 2025 12:10
Last Modified:	26 Nov 2025 12:10

Cite in APA 7:	Lombos, B. A., Côté, D., Dodelet, J.-P., Lawrence, M. F., & Dickson, J. I. (1986). Thermodynamic equilibrium displacement controlled epitaxial growth of GaAs. Journal of Crystal Growth, 79(1-3), 455-462. https://doi.org/10.1016/0022-0248%2886%2990477-x
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