Gabriel Éthier-Majcher
, Philippe St-Jean, Alaric Bergeron, Anne-Laurence Phaneuf-L'Heureux, Sjoerd Roorda and Sébastien Francoeur
Article (2013)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/65838/ |
| Journal Title: | Journal of Applied Physics (vol. 114, no. 3) |
| Publisher: | AIP Publishing |
| DOI: | 10.1063/1.4815883 |
| Official URL: | https://doi.org/10.1063/1.4815883 |
| Date Deposited: | 30 May 2025 10:01 |
| Last Modified: | 30 May 2025 10:01 |
| Cite in APA 7: | Éthier-Majcher, G., St-Jean, P., Bergeron, A., Phaneuf-L'Heureux, A.-L., Roorda, S., & Francoeur, S. (2013). Photoluminescence from single nitrogen isoelectronic centers in gallium phosphide produced by ion implantation. Journal of Applied Physics, 114(3), 034307 (4 pages). https://doi.org/10.1063/1.4815883 |
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