New formulas for evaluation of cyclohexanol solidification on substrates with surface nanostructures

In semiconductor manufacturing, the sublimation drying process is crucial but poorly understood─particularly regarding the solidification of agents such as cyclohexanol on Si substrates. This knowledge gap results in inconsistent film properties and risks such as structural collapse. To address this critical gap in knowledge, the present study focused on an in-depth examination of the nucleation behavior exhibited by cyclohexanol during its cooling and solidification on Si substrates. Using a digital camera (GoPro10), the solidification process in experiments was recorded for a range of cooling rates and using substrates with distinct surface patterns. To evaluate temporal changes in crystal nucleation, video images were visually checked, and the temporal changes in the number of nuclei were examined. For a more quantitative analysis, the least-squares method was successfully employed to correlate mathematical equations to time-dependent nucleation data. Interestingly, the outcomes revealed significant correlations between the nucleation rate, cooling rate, and substrate pattern. In summary, this research offers a robust experimental framework for understanding the complex solidification behavior of cyclohexanol on Si substrates. The study contributes both qualitative and quantitative analyses, enriching our understanding of the variables that govern the solidification process, which has significant implications for enhancing the overall reliability and efficiency of semiconductor manufacturing.

Mots clés

approximation; crystallization; crystals; nucleation; sublimation