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Dilute-antimonide GaSbN/GaN dots-in-wire heterostructures grown by molecular beam epitaxy: Structural and optical properties

Faqrul A. Chowdhury, Michel L. Trudeau, Renjie Wang, Hong Guo and Zetian Mi

Article (2021)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/47005/
Journal Title: Applied Physics Letters (vol. 118, no. 1)
Publisher: American Institute of Physics Inc.
DOI: 10.1063/5.0029761
Official URL: https://doi.org/10.1063/5.0029761
Date Deposited: 18 Apr 2023 14:59
Last Modified: 05 Apr 2024 11:47
Cite in APA 7: Chowdhury, F. A., Trudeau, M. L., Wang, R., Guo, H., & Mi, Z. (2021). Dilute-antimonide GaSbN/GaN dots-in-wire heterostructures grown by molecular beam epitaxy: Structural and optical properties. Applied Physics Letters, 118(1), 7 pages. https://doi.org/10.1063/5.0029761

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