Generalized twin-nonlinear two-box digital predistorter for GaN based LTE Doherty power amplifiers with strong memory effects

Oualid Hammi, Mohammad S. Sharawi and Fadhel M. Ghannouchi

Paper (2013)

Document published while its authors were not affiliated with Polytechnique Montréal

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PolyPublie URL:	https://publications.polymtl.ca/42341/
Conference Title:	IEEE International Wireless Symposium (IWS 2013)
Conference Location:	Beijing, China
Conference Date(s):	2013-04-14 - 2013-04-18
Publisher:	IEEE
DOI:	10.1109/ieee-iws.2013.6616813
Official URL:	https://doi.org/10.1109/ieee-iws.2013.6616813
Date Deposited:	18 Apr 2023 15:09
Last Modified:	08 Apr 2025 12:20

Cite in APA 7:	Hammi, O., Sharawi, M. S., & Ghannouchi, F. M. (2013, April). Generalized twin-nonlinear two-box digital predistorter for GaN based LTE Doherty power amplifiers with strong memory effects [Paper]. IEEE International Wireless Symposium (IWS 2013), Beijing, China (4 pages). https://doi.org/10.1109/ieee-iws.2013.6616813
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