Ab initio study of the diffusion mechanisms of gallium in a silicon matrix

K. Levasseur-Smith and Normand Mousseau

Article (2008)

Document published while its authors were not affiliated with Polytechnique Montréal

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PolyPublie URL:	https://publications.polymtl.ca/41494/
Journal Title:	European Physical Journal B (vol. 64, no. 2)
Publisher:	Springer-Verlag
DOI:	10.1140/epjb/e2008-00296-4
Official URL:	https://doi.org/10.1140/epjb/e2008-00296-4
Date Deposited:	18 Apr 2023 15:16
Last Modified:	08 Apr 2025 07:05

Cite in APA 7:	Levasseur-Smith, K., & Mousseau, N. (2008). Ab initio study of the diffusion mechanisms of gallium in a silicon matrix. European Physical Journal B, 64(2), 165-172. https://doi.org/10.1140/epjb/e2008-00296-4
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