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Ab initio study of the diffusion mechanisms of gallium in a silicon matrix

K. Levasseur-Smith and Normand Mousseau

Article (2008)

Document published while its authors were not affiliated with Polytechnique Montréal

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PolyPublie URL: https://publications.polymtl.ca/41494/
Journal Title: European Physical Journal B (vol. 64, no. 2)
Publisher: Springer-Verlag
DOI: 10.1140/epjb/e2008-00296-4
Official URL: https://doi.org/10.1140/epjb/e2008-00296-4
Date Deposited: 18 Apr 2023 15:16
Last Modified: 05 Apr 2024 11:38
Cite in APA 7: Levasseur-Smith, K., & Mousseau, N. (2008). Ab initio study of the diffusion mechanisms of gallium in a silicon matrix. European Physical Journal B, 64(2), 165-172. https://doi.org/10.1140/epjb/e2008-00296-4

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