Kevin Levasseur-Smith and Normand Mousseau
Article (2008)
Document published while its authors were not affiliated with Polytechnique Montréal
An external link is available for this itemPolyPublie URL: | https://publications.polymtl.ca/41312/ |
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Journal Title: | Journal of Applied Physics (vol. 103, no. 11) |
Publisher: | American Institute of Physics |
DOI: | 10.1063/1.2936887 |
Official URL: | https://doi.org/10.1063/1.2936887 |
Date Deposited: | 18 Apr 2023 15:16 |
Last Modified: | 08 Apr 2025 07:05 |
Cite in APA 7: | Levasseur-Smith, K., & Mousseau, N. (2008). Numerical characterization of the Ga interstitial self-diffusion mechanisms in GaAs. Journal of Applied Physics, 103(11), 113502 (5 pages). https://doi.org/10.1063/1.2936887 |
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