F. El-Mellouhi and Normand Mousseau
Article (2007)
Document published while its authors were not affiliated with Polytechnique Montréal
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| PolyPublie URL: | https://publications.polymtl.ca/41164/ |
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| Journal Title: | Applied Physics A-Materials Science & Processing (vol. 86, no. 3) |
| Publisher: | Springer |
| DOI: | 10.1007/s00339-006-3761-3 |
| Official URL: | https://doi.org/10.1007/s00339-006-3761-3 |
| Date Deposited: | 18 Apr 2023 15:16 |
| Last Modified: | 08 Apr 2025 07:05 |
| Cite in APA 7: | El-Mellouhi, F., & Mousseau, N. (2007). Ab initio characterization of arsenic vacancy diffusion pathways in GaAs with SIEST-A-RT. Applied Physics A-Materials Science & Processing, 86(3), 309-312. https://doi.org/10.1007/s00339-006-3761-3 |
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