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Tin Dioxide Electrolyte-Gated Transistors Working in Depletion and Enhancement Modes

Irina Valitova, Marta Maria Natile, Francesca Soavi, Clara Santato and Fabio Cicoira

Article (2017)

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Department: Department of Chemical Engineering
Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/38802/
Journal Title: ACS Applied Materials & Interfaces (vol. 9, no. 42)
Publisher: American Chemical Society (ACS)
DOI: 10.1021/acsami.7b09912
Official URL: https://doi.org/10.1021/acsami.7b09912
Date Deposited: 18 Apr 2023 15:05
Last Modified: 05 Apr 2024 11:33
Cite in APA 7: Valitova, I., Natile, M. M., Soavi, F., Santato, C., & Cicoira, F. (2017). Tin Dioxide Electrolyte-Gated Transistors Working in Depletion and Enhancement Modes. ACS Applied Materials & Interfaces, 9(42), 37013-37021. https://doi.org/10.1021/acsami.7b09912

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