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Remote Hydrogen-Nitrogen Plasma Chemical Vapor Deposition From a Tetramethyldisilazane Source. Part 1. Mechanism of the Process, Structure and Surface Morphology of Deposited Amorphous Hydrogenated Silicon Carbonitride Films

A. M. Wróbel, I. Blaszczyk, A. Walkiewicz-Pietrzykowska, A. Tracz, Jolanta-Ewa Sapieha, T. Aoki and Y. Hatanaka

Article (2003)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/25411/
Journal Title: Journal of Materials Chemistry (vol. 13, no. 4)
Publisher: The Royal Society of Chemistry
DOI: 10.1039/b211415c
Official URL: https://doi.org/10.1039/b211415c
Date Deposited: 18 Apr 2023 15:20
Last Modified: 07 May 2024 16:19
Cite in APA 7: Wróbel, A. M., Blaszczyk, I., Walkiewicz-Pietrzykowska, A., Tracz, A., Sapieha, J.-E., Aoki, T., & Hatanaka, Y. (2003). Remote Hydrogen-Nitrogen Plasma Chemical Vapor Deposition From a Tetramethyldisilazane Source. Part 1. Mechanism of the Process, Structure and Surface Morphology of Deposited Amorphous Hydrogenated Silicon Carbonitride Films. Journal of Materials Chemistry, 13(4), 731-737. https://doi.org/10.1039/b211415c

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