Remote Hydrogen-Nitrogen Plasma Chemical Vapor Deposition From a Tetramethyldisilazane Source. Part 1. Mechanism of the Process, Structure and Surface Morphology of Deposited Amorphous Hydrogenated Silicon Carbonitride Films

A. M. Wróbel, I. Blaszczyk, A. Walkiewicz-Pietrzykowska, A. Tracz, Jolanta-Ewa Sapieha, T. Aoki, Y. Hatanaka

Article (2003)

Access this document
External link
An external link is available for this item
Funders:
Polish State Committee for Scientific Research (KBN)
Grant number:
7T08C03118
Journal Title :
Journal of Materials Chemistry ( vol. 13 , no. 4 )
Publisher:
The Royal Society of Chemistry
OAI:
oai:publications.polymtl.ca:25411
ORCID
Date Deposited:
18 Apr 2023 15:20
Last Modified:
08 Oct 2026 17:26
Cite in APA 7:
Wróbel, A. M., Blaszczyk, I., Walkiewicz-Pietrzykowska, A., Tracz, A., Sapieha, J.-E., Aoki, T., & Hatanaka, Y. (2003). Remote Hydrogen-Nitrogen Plasma Chemical Vapor Deposition From a Tetramethyldisilazane Source. Part 1. Mechanism of the Process, Structure and Surface Morphology of Deposited Amorphous Hydrogenated Silicon Carbonitride Films. Journal of Materials Chemistry, 13(4), 731-737. https://doi.org/10.1039/b211415c

Statistics

Dimensions

Repository Staff Only

View Item
View Item