Fully distributed tunable bandpass filter based on Ba0.5Sr0.5TiO3 thin-film slow-wave structure

Sébastien L. Delprat, JaeHo Oh, Feng Xu, Lin Li, Erick E. Djoumessi, Marwa Ismail, Mohamed Chaker, Ke Wu

Article de revue (2011)

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This paper presents simulation and measurement results of fully distributed tunable coplanar bandpass filters (BPFs) with center frequencies around 6 GHz that make use of ferroelectric Barium Strontium Titanate (BaxSr1−xTiO3 or BST-x) thin film as tunable material. The two experimental bandpass filters tested are based on a novel frequency-agile structure composed of cascaded half wavelength slow-wave resonators (2 poles) and three coupled interdigital capacitors (IDCs) optimized for bias voltage application. Devices with gap dimensions of 10 and 3 μm are designed and fabricated with a two-step process on polycrystalline Ba0.5Sr0.5TiO3 thin films deposited on alumina substrate. A frequency tunability of 9% is obtained for the 10 μm gap structure at ±30 V with 7 dB insertion loss (the BST dielectric tunability being 26% with 0.04 loss tangent for this gap size). When the structure gap is reduced to 3 μm the center frequency shifts with a constant 9 dB insertion loss from 6.95 GHz at 0 V to 9.05 GHz at ±30 V, thus yielding a filter tunability of 30% (the BST dielectric tunability being 60% with 0.04 loss tangent for this gap size), a performance comparable to some extent to localized or lumped element BPFs operating at microwave frequency (>2 GHz).

Organismes subventionnaires:
GRSNG / NSERC, FCAR
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Titre de la revue :
International Journal of Microwave Science and Technology ( vol. 2011 )
Maison d'édition:
Hindawi
OAI:
oai:publications.polymtl.ca:10621
ORCID
Date du dépôt:
13 nov. 2023 09:08
Dernière modification:
14 oct. 2026 11:09
Citer en APA 7:
Delprat, S. L., Oh, J.H., Xu, F., Li, L., Djoumessi, E. E., Ismail, M., Chaker, M., & Wu, K. (2011). Fully distributed tunable bandpass filter based on Ba0.5Sr0.5TiO3 thin-film slow-wave structure. International Journal of Microwave Science and Technology, 2011, 468074 (10 pages). https://doi.org/10.1155/2011/468074

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