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Documents publiés en "2015"

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Nombre de documents: 8

Département de génie physique

Collette, M., Moutanabbir, O., & Champagne, A. R. (mai 2015). Electronic transport in silicon nanowires with ordered stacking faults [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Non disponible

Fournier-Lupien, J.-H., Chagnon, D., Lévesque, P., Wirths, S., Pippel, E., Mussler, G., Hartmann, J. M., Mantl, S., Desjardins, P., Buca, D., & Moutanabbir, O. (mai 2015). In situ studies of germanium-tin and silicon-germanium-tin dynamics of phase separation [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Non disponible

Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2015). Erratum: Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 106(17). Lien externe

Lewis, J. B., Isheim, D., Moutanabbir, O., Floss, C., & Seidman, D. N. (juillet 2015). Standardization and correction of artifacts in atom-probe tomographic analysis of Allende nanodiamonds [Résumé]. 78th Annual Meeting of the Meteoritical Society, Berkeley, Calif. (1 page). Publié dans Meteoritics & Planetary Science, 50(S1). Lien externe

Mukherjee, S., Attiaoui, A., Watanabe, H., Isheim, D., Seidman, D. N., & Moutanabbir, O. (mai 2015). 3D atom-by-atom mapping of emerging group IV semiconductors [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Non disponible

Mukherjee, S., Givan, U., Senz, S., Bergeron, A., Francoeur, S., De La Mata, M., Arbiol, J., Sekiguchi, T., Itoh, K. M., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2015). Phonon Engineering in Isotopically Disordered Silicon Nanowires. Nano Letters, 15(6), 3885-3893. Lien externe

Nateghi, N., Mukherjee, S., Choubak, S., Nguyen, M., Lévesque, P., Martel, R., Desjardins, P., & Moutanabbir, O. (mai 2015). Growth of III-V semiconductors on silicon oxide/silicon using graphene interlayer [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Non disponible

Scheerschmidt, K., & Moutanabbir, O. (2015). Tracking atomic processes throughout the formation of heteroepitaxial interfaces. Crystal Research and Technology, 50(6), 490-498. Lien externe

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