Documents publiés en "2013"

B

Béland, L. K., Anahory, Y., Smeets, D., Guihard, M., Brommer, P., Joly, J.-F., Pothier, J.-C., Lewis, L. J., Mousseau, N., & Schiettekatte, F. (2013). Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implanted c-Si. Physical Review Letters, 111(10), 105502 (5 pages). Lien externe