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Documents publiés en "1997"

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Nombre de documents: 10

Lewis, L. J., & Mousseau, N. (décembre 1997). Structural and electronic properties of a-GaAs: A tight-binding-molecular-dynamics-art simulation [Communication écrite]. Symposium R: Tight Binding Approach to Computational Materials Science, Boston, Mass.. Lien externe

Mousseau, N. (1997). Avalanche distribution in the Feder and Feder model: Effects of quenched disorder. Physical Review E, 55(3), 3682-3685. Lien externe

Mousseau, N. (1997). Comment on “Systematic approach to generate near-perfect periodic continuous random network models: Application to amorphous Si3N4” [Commentaire ou lettre]. Physical Review B, 56(21), 14190-14191. Lien externe

Mousseau, N. (1997). Computer modelling of glasses and glassy alloys. Dans Amorphous Insulators and Semiconductors (p. 133-150). Lien externe

Mousseau, N. (1997). Multiple phase changes induced by frustration in randomly connected cellular automata. Journal of Physics A: Mathematical and General, 30(9), 2995-3002. Lien externe

Mousseau, N., & Barkema, G. T. (décembre 1997). Exploring energy landscapes with the activation-relaxation technique [Communication écrite]. Workshop on Monte Carlo Approach to Biopolymers and Protein Folding, Jülich, Germany. Non disponible

Mousseau, N., & Barkema, G. T. (décembre 1997). Traveling through energy landscapes: the activation-relaxation technique [Communication écrite]. Workshop on Monte Carlo Approach to Biopolymers and Protein Folding, Jülich, Germany. Non disponible

Mousseau, N., & Lewis, L. J. (1997). Structural, electronic, and dynamical properties of amorphous gallium arsenide: A comparison between two topological models. Physical Review B, 56(15), 9461-9468. Lien externe

Mousseau, N., & Lewis, L. J. (1997). Topology of amorphous tetrahedral semiconductors on intermediate length scales. Physical Review Letters, 78(8), 1484-1487. Lien externe

Rubo, Y. G., Thorpe, M. F., & Mousseau, N. (1997). Strain broadening of the magnetization steps in diluted magnetic semiconductors. Physical Review B, 56(20), 13094-13102. Lien externe

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