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Items where Author is "Verheijen, M. A."

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Number of items: 4.


Fadaly, E. M. T., Dijkstra, A., Suckert, J. R., Ziss, D., van Tilburg, M. A. J., Mao, C. Y., Ren, Y. Z., van Lange, V. T., Korzun, K., Kölling, S., Verheijen, M. A., Busse, D., Rödl, C., Furthmüller, J., Bechstedt, F., Stangl, J., Finley, J. J., Botti, S., Haverkort, J. E. M., & Bakkers, E. (2020). Direct-bandgap emission from hexagonal Ge and SiGe alloys. Nature, 580(7802), 205-209. External link


Assali, S., Lahnemann, J., Vu, T. T. T., Jons, K. D., Gagliano, L., Verheijen, M. A., Akopian, N., Bakkers, E. P. A. M., & Haverkort, J. E. M. (2017). Crystal phase quantum well emission with digital control. Nano Letters, 17(10), 6062-6068. Available

Assali, S., Dijkstra, A., Li, A., Koelling, S., Verheijen, M. A., Gagliano, L., von den Driesch, N., Buca, D., Koenraad, P. M., Haverkort, J. E. M., & Bakkers, E. P. A. M. (2017). Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays. Nano Letters, 17(3), 1538-1544. External link


Koelling, S., Plantenga, R. C., Hauge, H. I. T., Ren, Y., Li, A., Verheijen, M. A., Conesa Boj, S., Assali, S., Koenraad, P. M., & Bakkers, E. P. A. M. (2016, October). Impurity and defect monitoring in hexagonal Si and SiGe nanocrystals [Paper]. Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (PRiME 2016)/230th ECS Meeting, Honolulu, HI. Published in ECS Transactions, 75(8). External link

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