 | Monter d'un niveau |
Assali, S., Dijkstra, A., Li, A., Koelling, S., Verheijen, M. A., Gagliano, L., von den Driesch, N., Buca, D., Koenraad, P. M., Haverkort, J. E. M., & Bakkers, E. P. A. M. (2017). Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays. Nano Letters, 17(3), 1538-1544. Lien externe
Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2015). Erratum: Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 106(17). Lien externe
Fournier-Lupien, J.-H., Chagnon, D., Lévesque, P., Wirths, S., Pippel, E., Mussler, G., Hartmann, J. M., Mantl, S., Desjardins, P., Buca, D., & Moutanabbir, O. (mai 2015). In situ studies of germanium-tin and silicon-germanium-tin dynamics of phase separation [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Non disponible
Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2013). Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 103(26). Lien externe
Moutanabbir, O., Assali, S., Gong, X., O'Reilly, E., Broderick, C. A., Marzban, B., Witzens, J., Du, W., Yu, S. Q., Chelnokov, A., Buca, D., & Nam, D. (2021). Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors. Applied Physics Letters, 118(11), 110502 (10 pages). Lien externe
Mukherjee, S., Kodali, N., Isheim, D., Wirths, S., Hartmann, J. M., Buca, D., Seidman, D. N., & Moutanabbir, O. (2017). Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors. Physical Review B, 95(16), 5 pages. Lien externe
