Up a level |
St-Jean, P., Ethier-Majcher, G., Andre, R., & Francoeur, S. (2016). High-fidelity and ultrafast initialization of a hole-spin bound to a Te isoelectronic center in ZnSe. Physical Review Letters, 117(16), 6 pages. External link
Marcet, S., Andre, R., & Francoeur, S. (2010). Excitons bound to Te isoelectronic dyads in ZnSe. Physical Review. B, Condensed Matter and Materials Physics, 82(23), 235309-235309. External link