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Solution-Processed Titanium Dioxide Ion-Gated Transistors and Their Application for pH Sensing

Arunprabaharan Subramanian, Mona Azimi, Cheng Lee Leong, Siew Ling Lee, Clara Santato et Fabio Cicoira

Article de revue (2022)

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Abstract

Titanium dioxide (TiO₂) is an abundant metal oxide, widely used in food industry, cosmetics, medicine, water treatment and electronic devices. TiO₂ is of interest for next-generation indium-free thin-film transistors and ion-gated transistors due to its tunable optoelectronic properties, ambient stability, and solution processability. In this work, we fabricated TiO₂ films using a wet chemical approach and demonstrated their transistor behavior with room temperature ionic liquids and aqueous electrolytes. In addition, we demonstrated the pH sensing behavior of the TiO2 IGTs with a sensitivity of ~48 mV/pH. Furthermore, we demonstrated a low temperature (120°C), solution processed TiO2-based IGTs on flexible polyethylene terephthalate (PET) substrates, which were stable under moderate tensile bending.

Mots clés

titanium dioxide; ion-gating; transistors; pH sensors; thin films

Sujet(s): 2000 Science et technologie des matériaux > 2010 Films minces et interfaces
Département: Département de génie chimique
Département de génie physique
Organismes subventionnaires: Defence Research and Development Canada, Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada
URL de PolyPublie: https://publications.polymtl.ca/54324/
Titre de la revue: Frontiers in Electronics (vol. 3)
Maison d'édition: Frontiers Media
DOI: 10.3389/felec.2022.813535
URL officielle: https://doi.org/10.3389/felec.2022.813535
Date du dépôt: 02 nov. 2023 13:45
Dernière modification: 02 oct. 2024 11:06
Citer en APA 7: Subramanian, A., Azimi, M., Leong, C. L., Lee, S. L., Santato, C., & Cicoira, F. (2022). Solution-Processed Titanium Dioxide Ion-Gated Transistors and Their Application for pH Sensing. Frontiers in Electronics, 3, 813535 (9 pages). https://doi.org/10.3389/felec.2022.813535

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